类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 2.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 270mOhm @ 1.2A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 500 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 760mW (Ta), 2.5W (Tc) |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SCT3080ALHRC11ROHM Semiconductor |
SICFET N-CH 650V 30A TO247N |
|
SSM3K15ACT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3 |
|
NVMFS5C404NWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
|
NVMFS6H801NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 23A/157A 5DFN |
|
SCTW35N65G2VSTMicroelectronics |
SICFET N-CH 650V 45A HIP247 |
|
IPP100N04S4H2AKSA1Rochester Electronics |
MOSFET N-CH 40V 100A TO220-3 |
|
DMT47M2SFVWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
2N7002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT-23 |
|
IRF9310TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 20A 8SO |
|
IPP65R310CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220-3 |
|
IPP80R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3 |
|
NVD5807NT4GRochester Electronics |
MOSFET N-CH 40V 23A DPAK |
|
BUK9Y53-100B,115Nexperia |
MOSFET N-CH 100V 23A LFPAK56 |