类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 115mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 7.5Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 50 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 200mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 (TO-236AB) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF9310TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 20A 8SO |
|
IPP65R310CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220-3 |
|
IPP80R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3 |
|
NVD5807NT4GRochester Electronics |
MOSFET N-CH 40V 23A DPAK |
|
BUK9Y53-100B,115Nexperia |
MOSFET N-CH 100V 23A LFPAK56 |
|
IXFX32N80PWickmann / Littelfuse |
MOSFET N-CH 800V 32A PLUS247-3 |
|
IRLM110ATFRochester Electronics |
MOSFET N-CH 100V 1.5A SOT223-4 |
|
NTTFS4C10NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A/44A 8WDFN |
|
IPT026N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 27A/202A 8HSOF |
|
IPD65R1K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.2A TO252-3 |
|
STF33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO220FP |
|
PSMN1R5-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IPI100N04S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |