English
简体中文
HEATSINK 40X40X12.7MM XCUT T412
MOSFET N-CH 800V 32A PLUS247-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 270mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 830W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLM110ATFRochester Electronics |
MOSFET N-CH 100V 1.5A SOT223-4 |
|
NTTFS4C10NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A/44A 8WDFN |
|
IPT026N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 27A/202A 8HSOF |
|
IPD65R1K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.2A TO252-3 |
|
STF33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO220FP |
|
PSMN1R5-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IPI100N04S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIRA26DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
IRF9540PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 19A TO220AB |
|
CSD18537NQ5ATexas Instruments |
MOSFET N-CH 60V 50A 8VSON |
|
UPA2810T1L-E2-AYRochester Electronics |
MOSFET P-CH 30V 13A 8DFN |
|
FDS4470Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IXFK220N15PWickmann / Littelfuse |
MOSFET N-CH 150V 220A TO264AA |