English
简体中文
CRYSTAL 16.0000MHZ 20PF SMD
MOSFET N-CH 30V 26.5A/60A 8DFN
TERM TURRET SNG
IC LASER DRVR 4 CHAN 14.5GBPS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26.5A (Ta), 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 800 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.2W (Ta), 31W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN-EP (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFZ24NSIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
BUK6Y14-40PXNexperia |
MOSFET P-CH 40V 64A LFPAK56 |
|
STF8N80K5STMicroelectronics |
MOSFET N-CH 800V 6A TO220FP |
|
IPD60R3K3C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 1.7A TO252-3 |
|
SISS08DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 53.9/195.5A PPAK |
|
IPB020NE7N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 120A D2PAK |
|
TN2540N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 260MA TO243AA |
|
SIR106ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 16.1A/65.8 PPAK |
|
RM80N60LDRectron USA |
MOSFET N-CHANNEL 60V 80A TO252-2 |
|
UPA2520T1H-T2-ATRochester Electronics |
MOSFET N-CH 30V 10A 8VSOF |
|
BSC050N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 16A/100A TDSON |
|
SQJA86EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
RQ3E100BNTBROHM Semiconductor |
MOSFET N-CH 30V 10A 8HSMT |