类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 273µA |
栅极电荷 (qg) (max) @ vgs: | 206 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 14400 pF @ 37.5 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263AB) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TN2540N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 260MA TO243AA |
|
SIR106ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 16.1A/65.8 PPAK |
|
RM80N60LDRectron USA |
MOSFET N-CHANNEL 60V 80A TO252-2 |
|
UPA2520T1H-T2-ATRochester Electronics |
MOSFET N-CH 30V 10A 8VSOF |
|
BSC050N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 16A/100A TDSON |
|
SQJA86EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
RQ3E100BNTBROHM Semiconductor |
MOSFET N-CH 30V 10A 8HSMT |
|
FQU1N50TURochester Electronics |
MOSFET N-CH 500V 1.1A IPAK |
|
RJK0236DPA-00#J5ARochester Electronics |
MOSFET N-CH 25V 50A 8DFN |
|
FDT86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.6A SOT223-4 |
|
IRF7606TRIR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A MICRO8 |
|
CSD18535KCSTexas Instruments |
MOSFET N-CH 60V 200A TO220-3 |
|
FCI11N60Rochester Electronics |
MOSFET N-CH 600V 11A I2PAK |