类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3.6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 90mOhm @ 2.4A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 520 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.8W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | Micro8™ |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CSD18535KCSTexas Instruments |
MOSFET N-CH 60V 200A TO220-3 |
|
FCI11N60Rochester Electronics |
MOSFET N-CH 600V 11A I2PAK |
|
FQI2P25TURochester Electronics |
MOSFET P-CH 250V 2.3A I2PAK |
|
DMN6140L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
DMT6013LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10A 6UDFN |
|
BUK7M27-80EXNexperia |
MOSFET N-CH 80V 30A LFPAK33 |
|
MCH3377-TL-HRochester Electronics |
MOSFET P-CH 20V 3A 3MCPH |
|
NP36P06KDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 36A TO263 |
|
DMN2025UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.5A 6UDFN |
|
VN10KN3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
|
IRFP140Rochester Electronics |
MOSFET N-CH 100V 31A TO247-3 |
|
3LN03M-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FDU8878Rochester Electronics |
MOSFET N-CH 30V 11A/40A IPAK |