类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 27mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 19.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1306 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 62W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK33 |
包/箱: | SOT-1210, 8-LFPAK33 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MCH3377-TL-HRochester Electronics |
MOSFET P-CH 20V 3A 3MCPH |
|
NP36P06KDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 36A TO263 |
|
DMN2025UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.5A 6UDFN |
|
VN10KN3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
|
IRFP140Rochester Electronics |
MOSFET N-CH 100V 31A TO247-3 |
|
3LN03M-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FDU8878Rochester Electronics |
MOSFET N-CH 30V 11A/40A IPAK |
|
ATP404-TL-HRochester Electronics |
MOSFET N-CH 60V 95A ATPAK |
|
BSC018NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 29A/100A TDSON |
|
SCTW90N65G2VSTMicroelectronics |
SICFET N-CH 650V 90A HIP247 |
|
SQ2389ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 4.1A SOT23-3 |
|
BUK9535-55A127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFK150N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 150A TO264 |