English
简体中文
CAP CER 20PF 100V C0G/NP0 0805
MOSFET N-CH 75V 120A TO220AB
METAL CONTENT CABLE TIE, 15.2" L
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.3mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.8V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 177 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 11.4 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 263W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSV236SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 1.5A SOT363-6 |
|
SI7423DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 7.4A PPAK 1212-8 |
|
PMV50UPEVLNexperia |
MOSFET P-CH 20V 3.7A TO236AB |
|
APT20M45BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 56A TO247 |
|
NTE2389NTE Electronics, Inc. |
MOSFET N-CHANNEL 60V 35A TO220 |
|
ZXMN10A09KTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 5A TO252-3 |
|
AUIRF2805Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
AON6242Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 18.5A/85A 8DFN |
|
SIHG100N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 30A TO247AC |
|
IXTH16P60PWickmann / Littelfuse |
MOSFET P-CH 600V 16A TO247 |
|
AO4286Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 4A 8SOIC |
|
IPB80N03S4L-03ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SMMBFJ310LT3Rochester Electronics |
RF N-CHANNEL, JUNCTION FET |