English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 280 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 46W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252-2 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS6673AZRochester Electronics |
MOSFET P-CH 30V 14.5A 8SOIC |
|
IPD50N06S4L12ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-31 |
|
SIHB22N60EL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
|
IRFR120TRRPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
IXFA36N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 36A TO263AA |
|
SIR800ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50.2A/177A PPAK |
|
SQ4005EY-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 15A 8SOIC |
|
IXFH120N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 120A TO247 |
|
IPP65R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA26N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 26A TO263AA |
|
NVD6820NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 90V 10A/50A DPAK |
|
DMP1096UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 2.6A U-WLB1010-4 |
|
STD4N80K5STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |
