English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 45A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 22.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 117 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 417W (Tc) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PHB20N06T,118Rochester Electronics |
MOSFET N-CH 55V 20.3A D2PAK |
|
HUFA75623S3STRochester Electronics |
MOSFET N-CH 100V 22A D2PAK |
|
AUIRF7759L2TRIR (Infineon Technologies) |
MOSFET N-CH 75V 375A DIRECTFET |
|
IPW60R280E6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO247-3 |
|
IXFR24N80PWickmann / Littelfuse |
MOSFET N-CH 800V 13A ISOPLUS247 |
|
RM15N650TIRectron USA |
MOSFET N-CHANNEL 650V 15A TO220F |
|
BSC084P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 14.9A 8TDSON |
|
IRFR1N60ATRLPBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
NVD6495NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25A DPAK |
|
IXFP14N85XWickmann / Littelfuse |
MOSFET N-CH 850V 14A TO220AB |
|
CSD19532KTTTexas Instruments |
MOSFET N-CH 100V 200A DDPAK |
|
STW33N60DM2STMicroelectronics |
MOSFET N-CH 600V 24A TO247 |
|
NVTFS5820NLWFTAGRochester Electronics |
60V, 0.0115OHM, N-CHANNEL, MOSF |
