类型 | 描述 |
---|---|
系列: | FRFET®, SuperFET® III |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 150mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 5V @ 540µA |
栅极电荷 (qg) (max) @ vgs: | 43 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1985 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 192W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DI150N03PQDiotec Semiconductor |
MOSFET N-CH 30V 100A 8QFN |
|
IRFR9024PBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
FQB34P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 33.5A D2PAK |
|
MTD5N25ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP150N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A TO220-3 |
|
SIHG11N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 12A TO247AC |
|
SQD50N05-11L_GE3Vishay / Siliconix |
MOSFET N-CH 50V 50A TO252AA |
|
2SK2084L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFD16N06LESM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 16A TO252AA |
|
NTD4810N-1GRochester Electronics |
MOSFET N-CH 30V 9A/54A IPAK |
|
SI4463BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 9.8A 8SO |
|
IPI60R385CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCT3080ARC14ROHM Semiconductor |
SICFET N-CH 650V 30A TO247-4L |