English
简体中文
CLEAR POLYCARBONATE FACES 1=1PC
MOSFET P-CH 20V 650MA SOT523
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 650mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 360mOhm @ 350mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.2 nC @ 4.5 V |
| vgs (最大值): | 8V |
| 输入电容 (ciss) (max) @ vds: | 100 pF @ 16 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300mW (Ta) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-523 |
| 包/箱: | SOT-523 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPHR8504PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8SOP |
|
STF6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A TO220FP |
|
SIHP23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO220AB |
|
TK4A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 4A TO220SIS |
|
IPW65R080CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 43.3A TO247-3 |
|
UJ3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
SPB11N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
FQP7N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.6A TO220-3 |
|
BSC886N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI3205PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 64A TO220AB FP |
|
IXTP130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO220 |
|
SQM40041EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 120A TO263 |
|
FQD17P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |