RES 172K OHM 1/4W .5% AXIAL
TVS DIODE 58V 110V SMD
MOSFET N-CH 60V 9A/55A TO220
BOX ALUM BLACK 6.3"L X 6.3"W
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 55A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.7mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2007 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta), 75W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
5LP01M-TL-ERochester Electronics |
MOSFET P-CH 50V 70MA 3MCP |
|
IXFT16N80PWickmann / Littelfuse |
MOSFET N-CH 800V 16A TO268 |
|
SPA15N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO220-FP |
|
IRF6620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 27A DIRECTFET |
|
STW33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO247 |
|
NVD5C478NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/45A DPAK |
|
STP52P3LLH6STMicroelectronics |
MOSFET N-CHANNEL 30V 52A TO220 |
|
STF8N65M5STMicroelectronics |
MOSFET N-CH 650V 7A TO220FP |
|
BSC500N20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 24A TDSON-8 |
|
PMV130ENEA/DG/B2215Rochester Electronics |
PMV130ENEA SMALL SIGNAL FET |
|
TSM080N03PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 73A 8PDFN |
|
SSM6J212FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A ES6 |
|
PMF780SN,115Rochester Electronics |
MOSFET N-CH 60V 570MA SOT323-3 |