English
简体中文
MOSFET P-CH 12V 3.5A TUMT6
600MA SYNCHRONOUS STEP-DOWN DCDC
DUAL MARKED (AD7524UQ/883B)
CELLULAR ROUTER GLOBAL HSPA 3G
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 42mOhm @ 3.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 4.5 V |
| vgs (最大值): | -8V |
| 输入电容 (ciss) (max) @ vds: | 2700 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TUMT6 |
| 包/箱: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD90N06S404ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
IRLZ14STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
DMP2004TK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 430MA SOT523 |
|
SI6423DQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 8.2A 8TSSOP |
|
RD3L140SPTL1ROHM Semiconductor |
MOSFET P-CH 60V 14A TO252 |
|
IXFT12N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO268 |
|
NTD18N06L-1GRochester Electronics |
MOSFET N-CH 60V 18A IPAK |
|
NVMFS5C410NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
IPP180N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO220-3 |
|
IPN95R2K0P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A SOT223 |
|
DMT3003LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 22A PWRDI3333 |
|
IPP048N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-3 |
|
SPD08P06PGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 8.83A TO252-3 |