类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1700 V |
电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 20V |
rds on (max) @ id, vgs: | 35mOhm @ 100A, 20V |
vgs(th) (最大值) @ id: | 4V @ 36mA |
栅极电荷 (qg) (max) @ vgs: | 376 nC @ 20 V |
vgs (最大值): | +20V, -5V |
输入电容 (ciss) (max) @ vds: | 7340 pF @ 1000 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
供应商设备包: | SOT-227B |
包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP2N40-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO220-3 |
|
SIR680DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 100A PPAK SO-8 |
|
5HN01SS-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SSFP3 |
|
RM1A4N150S6Rectron USA |
MOSFET N-CH 150V 1.4A SOT23-6 |
|
MSC70SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 89A SOT227 |
|
FDB6670ASRochester Electronics |
MOSFET N-CH 30V 62A TO263AB |
|
IMZA65R048M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
RJK03C0DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 70A 8WPAK |
|
IRF60R217IR (Infineon Technologies) |
MOSFET N-CH 60V 58A DPAK |
|
TP65H070LDGTransphorm |
GANFET N-CH 650V 25A 3PQFN |
|
SI4190ADY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 18.4A 8SO |
|
FCD620N60ZFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.3A DPAK |
|
NVMFS5C430NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 35A/185A 5DFN |