English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 64.6A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 0.88mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 165 nC @ 10 V |
| vgs (最大值): | +20V, -16V |
| 输入电容 (ciss) (max) @ vds: | 9100 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.25W (Ta), 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8DC |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD19538Q2Texas Instruments |
MOSFET N-CH 100V 14.4A 6WSON |
|
IPB010N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 45A/180A TO263-7 |
|
AOB409LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 5A/31.5A TO263 |
|
RJK5030DPP-M0#T2Renesas Electronics America |
MOSFET N-CH 500V 5A TO220FL |
|
DMN62D0UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 340MA SOT323 |
|
FDPF10N50FTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A TO220F |
|
STD28P3LLH6AGSTMicroelectronics |
MOSFET P-CH 30V 12A DPAK |
|
SIR882ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
DMG3406L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.6A SOT23 |
|
PMG85XP,115Rochester Electronics |
NOW NEXPERIA PMG85XP - SMALL SIG |
|
IXTP36P15PWickmann / Littelfuse |
MOSFET P-CH 150V 36A TO220AB |
|
PHK12NQ03LT,518-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRFR4104PBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
