English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 49A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 17.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1470 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 94W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP065N04N GRochester Electronics |
MOSFET N-CH 40V 50A TO220-3 |
|
FQB8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 8A D2PAK |
|
STP10N105K5STMicroelectronics |
MOSFET N-CH 1050V 6A TO220 |
|
FQPF2NA90Rochester Electronics |
MOSFET N-CH 900V 1.7A TO220F |
|
IRF9Z34PBFVishay / Siliconix |
MOSFET P-CH 60V 18A TO220AB |
|
IXFB132N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 132A PLUS264 |
|
FQA70N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 70A TO3PN |
|
NTF3055-160T3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW70N65DM6STMicroelectronics |
MOSFET N-CH 650V 68A TO247 |
|
IPD90N04S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
|
FK8V03020LPanasonic |
MOSFET N CH 33V 14A WMINI8 |
|
NTQD4154ZR2GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPZ40N04S5L2R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
