English
简体中文
MOSFET N-CH 600V 23A ISOPLUS220
RX TXRX MODULE CEL AMERICA AT&T
TAPE DBL COAT GRAY 10"X 10" 2/PK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 1.2mA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2800 pF @ 100 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS220™ |
| 包/箱: | ISOPLUS220™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK15J60U(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15A TO3P |
|
FDD9409-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 90A DPAK |
|
FQD630TFRochester Electronics |
MOSFET N-CH 200V 7A DPAK |
|
DMTH3004LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI5060 |
|
IRLZ44PBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
CSD18514Q5ATTexas Instruments |
MOSFET N-CH 40V 89A 8VSON |
|
TJ20S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 20A DPAK |
|
NTD3808N-1GRochester Electronics |
MOSFET N-CH 16V 12A/76A IPAK |
|
STI6N95K5STMicroelectronics |
NCHANNEL 950V ZENER POWER MOSFET |
|
IRFR220NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 5A DPAK |
|
SUD09P10-195-BE3Vishay / Siliconix |
MOSFET P-CH 100V 8.8A DPAK |
|
SISH106DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12.5A PPAK |
|
BUK6D38-30EXNexperia |
MOSFET N-CH 30V 5.5A/17A 6DFN |