English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HTMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 400mOhm @ 100mA, 5V |
| vgs(th) (最大值) @ id: | 2.4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.3 nC @ 5 V |
| vgs (最大值): | 10V |
| 输入电容 (ciss) (max) @ vds: | 290 pF @ 28 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tj) |
| 工作温度: | -55°C ~ 225°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | 4-Power Tab |
| 包/箱: | 4-SIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMTH8012LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 50A TO252 |
|
MMDF1300R2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
UPA2726UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 20A 8DFN |
|
FDB6035LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
VS-FA40SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 40A SOT-227 |
|
APT8043SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 20A D3PAK |
|
SUM55P06-19L-E3Vishay / Siliconix |
MOSFET P-CH 60V 55A TO263 |
|
IRFS9N60ATRRPBFVishay / Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
|
BSC028N06LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 23A/100A TDSON |
|
STB5NK52ZD-1STMicroelectronics |
MOSFET N-CH 520V 4.4A I2PAK |
|
FDC6308PRochester Electronics |
P-CHANNEL MOSFET |
|
MTB50P03HDLT4Rochester Electronics |
MOSFET P-CH 30V 50A D2PAK |
|
IPA60R520E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 8.1A TO220-FP |
