CAP CER 2200PF 16V X7R 0805
MOSFET N-CH 30V 13A 8SO
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 11mOhm @ 7.3A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 79 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.8 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SO |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLR3705ZPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IPD60R210PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16A TO252-3 |
|
IXTP76N25TWickmann / Littelfuse |
MOSFET N-CH 250V 76A TO220AB |
|
IRF2807ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 75A TO220AB |
|
ZXMN6A09KQTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 11.8A TO252 |
|
SIHD3N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A TO252AA |
|
EPC2019EPC |
GANFET N-CH 200V 8.5A DIE |
|
NTR4101PT1HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.8A SOT23-3 |
|
IRFH8201TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 49A/100A 8PQFN |
|
STH240N75F3-6STMicroelectronics |
MOSFET N-CH 75V 180A H2PAK-6 |
|
MCH3479-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A SC70 |
|
IPI076N12N3GAKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 100A TO262-3 |
|
IPW60R040CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 50A TO247-3 |