







MOSFET P-CH 20V 4.2A SOT23
IC EEPROM 512KBIT I2C 1MHZ 8SOIC
LS RECEIVER RES 40MM, AREA 700MM
IC SRAM 4.5MBIT PAR 165CABGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.2A (Tj) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 60mOhm @ 2.7A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 740 pF @ 4 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.4W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IXTP08N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 800MA TO220AB |
|
|
APT8020LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 38A TO264 |
|
|
IRLZ24LPBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO262-3 |
|
|
IRFB4410ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO220AB |
|
|
SIRA58ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 40V 32.3A/109A PPAK |
|
|
TK31V60W5,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
|
|
IPD50R800CEATMA1Rochester Electronics |
MOSFET N-CH 500V 5A TO252-3 |
|
|
5LN01SS-TL-HRochester Electronics |
MOSFET N-CH 50V 100MA 3SSFP |
|
|
CPH6355-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3A 6CPH |
|
|
SUD19N20-90-T4-E3Vishay / Siliconix |
MOSFET N-CH 200V 19A TO252 |
|
|
MTW7N80ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRF7420PBFRochester Electronics |
MOSFET P-CH 12V 11.5A 8SO |
|
|
IXTA130N10T-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 130A TO263 |