类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.4Ohm @ 3A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 620 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 74W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSS138NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
APT23F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
MTB60N10E7LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC050N03MSGATMA1Rochester Electronics |
PFET, 16A I(D), 30V, 0.0063OHM, |
|
IRFR3303TRPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
CSD23381F4Texas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
SIHW30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AD |
|
IRF6810STRPBFRochester Electronics |
PFET, 16A I(D), 25V, 0.0052OHM, |
|
IXFK240N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 240A TO264 |
|
IRFZ44ESPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFSL4127PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 72A TO262 |
|
DMPH4029LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 8A/22A PWRDI3333 |
|
BUK6E2R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A I2PAK |