English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5mOhm @ 120A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 345 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 23800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1250W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ44ESPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFSL4127PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 72A TO262 |
|
DMPH4029LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 8A/22A PWRDI3333 |
|
BUK6E2R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A I2PAK |
|
NTB65N02RT4GRochester Electronics |
MOSFET N-CH 25V 7.6A D2PAK |
|
DMP3035LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 11A 8SOP |
|
NVMFS5C628NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
SI7810DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 3.4A PPAK1212-8 |
|
IPP030N10N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO220-3 |
|
NVMFS5885NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.2A 5DFN |
|
PMV20ENRNexperia |
MOSFET N-CH 30V 6A TO236AB |
|
RM8N650T2Rectron USA |
MOSFET N-CHANNEL 650V 8A TO220-3 |
|
NTA4001NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 238MA SC75 |
