类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 20V |
rds on (max) @ id, vgs: | 16mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 30.7 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1655 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS5C628NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
SI7810DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 3.4A PPAK1212-8 |
|
IPP030N10N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO220-3 |
|
NVMFS5885NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.2A 5DFN |
|
PMV20ENRNexperia |
MOSFET N-CH 30V 6A TO236AB |
|
RM8N650T2Rectron USA |
MOSFET N-CHANNEL 650V 8A TO220-3 |
|
NTA4001NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 238MA SC75 |
|
RF4E100AJTCRROHM Semiconductor |
MOSFET N-CH 30V 10A HUML2020L8 |
|
BSC031N06NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TDSON-8-1 |
|
STFI13NK60ZSTMicroelectronics |
MOSFET N-CH 600V 13A I2PAKFP |
|
IRFBG30PBFVishay / Siliconix |
MOSFET N-CH 1000V 3.1A TO220AB |
|
APT5020BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 26A TO247 |
|
FQP3N50CRochester Electronics |
N-CHANNEL POWER MOSFET |