English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 10V |
| rds on (max) @ id, vgs: | 115mOhm @ 2.6A, 10V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.2 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 315 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.4W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3L |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7528-100A,127Rochester Electronics |
PFET, 47A I(D), 100V, 0.028OHM, |
|
TK3A65DA(STA4,QM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2.5A TO220SIS |
|
BSZ058N03MSGRochester Electronics |
BSZ058N03 - 12V-300V N-CHANNEL P |
|
IXTA02N250HVWickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO263AB |
|
SUD20N10-66L-BE3Vishay / Siliconix |
MOSFET N-CH 100V 16.9A DPAK |
|
IRFU014PBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
|
NTTS2P03R2Rochester Electronics |
MOSFET P-CH 30V 2.1A MICRO8 |
|
CPC3980ZTRWickmann / Littelfuse |
MOSFET N-CH 800V SOT223 |
|
IRF9520SPBFVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
|
FDP8896Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/92A TO220-3 |
|
IRFR010PBF-BE3Vishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
|
STP11NK50ZSTMicroelectronics |
MOSFET N-CH 500V 10A TO220AB |
|
APT6025SVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 25A D3PAK |
