CAP CER 39PF 200V C0G/NP0 RADIAL
MOSFET N-CH 50V 8.2A DPAK
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 50 V |
电流 - 连续漏极 (id) @ 25°c: | 8.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 200mOhm @ 4.6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-PAK (TO-252AA) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP11NK50ZSTMicroelectronics |
MOSFET N-CH 500V 10A TO220AB |
|
APT6025SVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 25A D3PAK |
|
IRFPC60Vishay / Siliconix |
MOSFET N-CH 600V 16A TO247-3 |
|
TK100L60W,VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 100A TO3P |
|
IPDD60R055CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 52A HDSOP-10 |
|
FDS6676ASRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFA36N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 36A TO263AA |
|
CSD18531Q5ATexas Instruments |
MOSFET N-CH 60V 19A/100A 8VSON |
|
BUK9M6R7-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
BUK9Y11-80EXNexperia |
MOSFET N-CH 80V 84A LFPAK56 |
|
IPD80R900P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO252-3 |
|
SIR510DP-T1-RE3Vishay / Siliconix |
N-CHANNEL 100 V (D-S) MOSFET POW |
|
NTMFS4931NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A/246A 5DFN |