English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 84A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 10mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 44.2 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 6506 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 194W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD80R900P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO252-3 |
|
SIR510DP-T1-RE3Vishay / Siliconix |
N-CHANNEL 100 V (D-S) MOSFET POW |
|
NTMFS4931NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A/246A 5DFN |
|
IPA60R950C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO220-FP |
|
FQB19N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 21A D2PAK |
|
FDW264PRochester Electronics |
MOSFET P-CH 20V 9.7A 8TSSOP |
|
RQ5A040ZPTLROHM Semiconductor |
MOSFET P-CH 12V 4A TSMT3 |
|
HUF76009P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1334-TL-HRochester Electronics |
MOSFET P-CH 12V 1.6A 6SCH |
|
AOD444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 4A/12A TO252 |
|
SI4838BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 34A 8SO |
|
DMTH4005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO220AB |
|
PXN6R2-25QLJNexperia |
PXN6R2-25QL/SOT8002/MLPAK33 |
