English
简体中文
RES 5W XSM M/OX 5% 10K
MOSFET N-CH 30V 185A 8PDFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 185A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.8mOhm @ 29A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3479 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 104W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PDFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RF4E075ATTCRROHM Semiconductor |
MOSFET P-CH 30V 7.5A HUML2020L8 |
|
SI7454DDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 21A PPAK SO-8 |
|
HUF76645S3SRochester Electronics |
MOSFET N-CH 100V 75A D2PAK |
|
R6030ENXROHM Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
|
STP95N4F3STMicroelectronics |
MOSFET N-CH 40V 80A TO220AB |
|
BUK752R3-40C,127Rochester Electronics |
PFET, 100A I(D), 40V, 0.0023OHM, |
|
NDS9435ARochester Electronics |
MOSFET P-CH 30V 5.3A 8SOIC |
|
BUK7Y15-100EXRochester Electronics |
MOSFET N-CH 100V 68A LFPAK56 |
|
FDD3680Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25A TO252 |
|
RSJ800N06TLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTS |
|
CPH6347-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 6A 6CPH |
|
2N7002A-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 180MA SOT23 |
|
SI4636DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A 8SO |