English
简体中文
CAP CER 0.018UF 200V C0G 1825
MOSFET N-CH 60V 340MA SOT323
IC FLASH 32MBIT PARALLEL 48TFBGA
300 DPI PRINTER W/EASY-MARK LABL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 340mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 5V |
| rds on (max) @ id, vgs: | 2Ohm @ 50mA, 5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.4 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 28.5 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 320mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-323 |
| 包/箱: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN2R6-60PS127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL3103STRLPBFRochester Electronics |
IRL3103 - HEXFET POWER MOSFET |
|
NVMFS5C612NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
PMZB790SN,315Rochester Electronics |
MOSFET N-CH 60V 650MA DFN1006B-3 |
|
IRF7855PBFRochester Electronics |
MOSFET N-CH 60V 12A 8SO |
|
FQI3N30TURochester Electronics |
MOSFET N-CH 300V 3.2A I2PAK |
|
BSS169L6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
CPC3708CTRWickmann / Littelfuse |
MOSFET N-CH 350V 5MA SOT89 |
|
IAUT300N08S5N012ATMA2IR (Infineon Technologies) |
MOSFET N-CH 80V 300A 8HSOF |
|
FQI13N06LTURochester Electronics |
MOSFET N-CH 60V 13.6A I2PAK |
|
FQP19N10LRochester Electronics |
MOSFET N-CH 100V 19A TO220-3 |
|
NTD32N06L-001Rochester Electronics |
MOSFET N-CH 60V 32A IPAK |
|
NTMFS5C670NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |