类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 9.8A (Ta), 27A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 21mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 2V @ 16µA |
栅极电荷 (qg) (max) @ vgs: | 5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 410 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.8W (Ta), 28W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 4-LFPAK |
包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDD86381-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 25A DPAK |
|
TPIC1301DWRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD320N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A TO252-3 |
|
MCH6336-TL-E-ONRochester Electronics |
MOSFET P-CH 12V 5A SC88FL/ MCPH6 |
|
NTMFS4C08NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/52A 5DFN |
|
AOI2N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO251A |
|
SI4100DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 6.8A 8SO |
|
SI1469DH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A SC70-6 |
|
SIR622DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 51.6A PPAK SO-8 |
|
ISL9N304AP3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TN0620N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 200V 250MA TO92-3 |
|
IPC100N04S5L1R9ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
FQA62N25CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 62A TO3PN |