English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 52A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.8mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1113 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 760mW (Ta), 25.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOI2N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO251A |
|
SI4100DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 6.8A 8SO |
|
SI1469DH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A SC70-6 |
|
SIR622DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 51.6A PPAK SO-8 |
|
ISL9N304AP3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TN0620N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 200V 250MA TO92-3 |
|
IPC100N04S5L1R9ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
FQA62N25CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 62A TO3PN |
|
DMNH6011LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 55V 80A TO252 T&R |
|
PSMN1R5-40ES,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
G3R350MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO247-3 |
|
BUK652R6-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A TO220AB |
|
SSP4N90ARochester Electronics |
N-CHANNEL POWER MOSFET |
