类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.6mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 136 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9.71 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 338W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I2PAK |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
G3R350MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO247-3 |
|
BUK652R6-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A TO220AB |
|
SSP4N90ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUF76609D3SRochester Electronics |
MOSFET N-CH 100V 10A DPAK |
|
IXTT20P50PWickmann / Littelfuse |
MOSFET P-CH 500V 20A TO268 |
|
TK7P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 7A DPAK |
|
IRF7413PBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
IRF7424TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
BSC065N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 60V 64A 8TDSON |
|
BSZ019N03LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A . 40A TSDSON |
|
NVMFS5C450NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A 5DFN |
|
IRFSL4510PBFRochester Electronics |
MOSFET N-CH 100V 61A TO262 |
|
AOB360A70LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO263 |