English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16.9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 66mOhm @ 6.6A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 860 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.1W (Ta), 41.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STL18N55M5STMicroelectronics |
MOSFET N-CH 550V 2.4A POWERFLAT |
|
TK65G10N1,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 65A D2PAK |
|
FQA16N25CRochester Electronics |
MOSFET N-CH 250V 17.8A TO3P |
|
IRFRC20TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
DMN2022UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 7.9A 6UDFN |
|
BUK7E4R3-75C,127Rochester Electronics |
MOSFET N-CH 75V 100A I2PAK |
|
FDB0105N407LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 460A TO263-7 |
|
SPD30N03S2L07GBTMA1Rochester Electronics |
MOSFET N-CH 30V 30A TO252-3 |
|
FDY302NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 600MA SC89-3 |
|
IPC100N04S51R2ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
AOT27S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 27A TO220 |
|
IRFD9110PBFVishay / Siliconix |
MOSFET P-CH 100V 700MA 4DIP |
|
SSM3J35CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CHANNEL 20V 100MA CST3 |
