MOSFET N-CH 60V 2.3A SOT23-3
DIODE SFR DO-201 50V 3A
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 2.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 150mOhm @ 2.3A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 205 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TPN2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8TSON |
|
ISL9N302AP3Rochester Electronics |
MOSFET N-CH 30V 75A TO220-3 |
|
CSD23202W10Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
IXTA50N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO263 |
|
IPF13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO252-3 |
|
UPA2727UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 16A 8DFN |
|
IRL540NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
SI2333DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3 |
|
FQD20N06TFRochester Electronics |
MOSFET N-CH 60V 16.8A DPAK |
|
FDP032N08-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 75V 120A TO220 |
|
IRLL2705TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 3.8A SOT223 |
|
IRFR7546TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 56A DPAK |
|
APT6013JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 39A ISOTOP |