English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 3.8A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 48 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR7546TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 56A DPAK |
|
APT6013JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 39A ISOTOP |
|
IPP65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMNH4011SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 50A TO252 |
|
CPC3982TTRWickmann / Littelfuse |
MOSFET N-CH 800V SOT23 |
|
MCQ4953-TPMicro Commercial Components (MCC) |
MOSFET P-CH 30V 5.1A 8SOP |
|
HUF76419D3STRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
NTNUS3171PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 150MA SOT1123 |
|
PMF250XNEXNexperia |
MOSFET N-CH 30V 1A SOT323 |
|
TK6P53D(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 525V 6A DPAK |
|
IPB120N06S4H1ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
IPP60R280CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
STB20NM60DSTMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
