English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Ta), 114A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.4mOhm @ 68A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5660 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.3W (Ta), 100W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET L8 |
| 包/箱: | DirectFET™ Isometric L8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPH2R506PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
|
FDPF5N50NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4.5A TO220F |
|
FQP9N25CRochester Electronics |
MOSFET N-CH 250V 8.8A TO220-3 |
|
ISC026N03L5SATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 24A/100A TDSON |
|
FQT5P10TFSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 1A SOT223-4 |
|
FQA9N90-F109Rochester Electronics |
MOSFET N-CH 900V 8.6A TO3PN |
|
IRFS450BSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9.6A TO3PF |
|
IXTQ470P2Wickmann / Littelfuse |
MOSFET N-CH 500V 42A TO3P |
|
VN2222LLRLRARochester Electronics |
MOSFET N-CH 60V 150MA TO92-3 |
|
BUK9M11-40EXNexperia |
MOSFET N-CH 40V 53A LFPAK33 |
|
STD3LN62K3STMicroelectronics |
MOSFET N-CH 620V 2.5A DPAK |
|
BUK9640-100A,118Nexperia |
MOSFET N-CH 100V 39A D2PAK |
|
BUK9Y3R0-40E,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
