English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 77mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 32.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT50M65B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 67A T-MAX |
|
3LP01SS-TL-HRochester Electronics |
MOSFET P-CH 30V 100MA SMCP |
|
NVF3055L108T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
AOI294AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 55A TO251A |
|
IPD30N06S215ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-31 |
|
IPW60R024P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 101A TO247-3-41 |
|
MTB30P06VT4Rochester Electronics |
MOSFET P-CH 60V 30A D2PAK |
|
STP36NF06LSTMicroelectronics |
MOSFET N-CH 60V 30A TO220AB |
|
STP75NF75STMicroelectronics |
MOSFET N-CH 75V 80A TO220AB |
|
TPN11003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 11A 8TSON-ADV |
|
SSM3J15FV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 100MA VESM |
|
MMFTN6001Diotec Semiconductor |
MOSFET N-CH 60V 440MA SOT23-3 |
|
FDMC86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/18A 8MLP |
