English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FDmesh™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 53 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1380 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 192W (Tc) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA65R1K0CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.2A TO220 |
|
IRFZ44VPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 55A TO220AB |
|
IRF610LPBFVishay / Siliconix |
MOSFET N-CH 200V 3.3A I2PAK |
|
IXFK102N30PWickmann / Littelfuse |
MOSFET N-CH 300V 102A TO264AA |
|
MCH3474-TL-ERochester Electronics |
MOSFET N-CH 30V 4A SC70FL/MCPH3 |
|
SIS108DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A/16A PPAK |
|
NTTFS4824NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.3A/69A 8WDFN |
|
FQB11N40CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A D2PAK |
|
IPD50N04S308ATMA1-INFRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STF3LN80K5STMicroelectronics |
MOSFET N-CH 800V 2A TO220FP |
|
IPB117N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 84A TO263-3 |
|
PMN120ENEAXNexperia |
MOSFET N-CH 60V 2.5A 6TSOP |
|
FQPF22N30Rochester Electronics |
MOSFET N-CH 300V 12A TO220F |
