English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMN23UN,135Rochester Electronics |
MOSFET N-CH 20V 6.3A 6TSOP |
|
IPZ60R041P6FKSA1Rochester Electronics |
MOSFET N-CH 600V 77.5A TO247-4 |
|
BSS119NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 190MA SOT23-3 |
|
BUZ73AE3046Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7629DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35A PPAK1212-8 |
|
AOTF9N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 9A TO220-3F |
|
NTE2932NTE Electronics, Inc. |
MOSFET N-CH 200V 21.3A TO3PML |
|
BUK758R3-40E,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
2SK1460LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
AON7566Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 34A 8DFN |
|
APT40N60JCU3Roving Networks / Microchip Technology |
MOSFET N-CH 600V 40A SOT227 |
|
PMPB215ENEAXNexperia |
MOSFET N-CH 80V 1.9A DFN2020MD-6 |
|
IPD85P04P4L06ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 85A TO252-3 |
