English
简体中文
CRYSTAL 40.0000MHZ 12PF SMD
SICFET N-CH 900V 11.5A TO247-3
SENSOR RETROREFLECTIVE 3M PNP
SENSOR 300PSI 1/8-27NPT 4-20MA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E-Series, Automotive |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 360mOhm @ 7.5A, 15V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.2mA |
| 栅极电荷 (qg) (max) @ vgs: | 9.5 nC @ 15 V |
| vgs (最大值): | +18V, -8V |
| 输入电容 (ciss) (max) @ vds: | 150 pF @ 600 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 54W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM3K36FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 500MA SSM |
|
TSM4ND65CITSC (Taiwan Semiconductor) |
MOSFET N-CH 650V 4A ITO220 |
|
SI7106DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 12.5A PPAK1212-8 |
|
DMP3068L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.3A SOT23 |
|
IPW60R075CPAFKSA1IR (Infineon Technologies) |
AUTOMOTIVE |
|
STU2N105K5STMicroelectronics |
MOSFET N-CH 1050V 1.5A IPAK |
|
BSL307SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 5.5A 6TSOP |
|
AOTF125A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO220F |
|
NVMFS6H824NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19A/103A 5DFN |
|
IPAN60R280P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A TO220 |
|
2N6760Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW60R070C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 53A TO247-3 |
|
CSD17573Q5BTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |