English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ K5 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1050 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8Ohm @ 750mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 115 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSL307SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 5.5A 6TSOP |
|
AOTF125A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO220F |
|
NVMFS6H824NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19A/103A 5DFN |
|
IPAN60R280P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A TO220 |
|
2N6760Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW60R070C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 53A TO247-3 |
|
CSD17573Q5BTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
DMP4013SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 11A PWRDI5060 |
|
NTD20N06LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
|
IPZ40N04S5L4R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
|
FCPF11N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
FDS8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
ES6U1T2RROHM Semiconductor |
MOSFET P-CH 12V 1.3A 6WEMT |
