类型 | 描述 |
---|---|
系列: | SuperFET™ |
包裹: | Tube |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 380mOhm @ 5.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1490 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 36W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
ES6U1T2RROHM Semiconductor |
MOSFET P-CH 12V 1.3A 6WEMT |
|
SI3443DVSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A SUPERSOT6 |
|
FDB8453LZRochester Electronics |
MOSFET N-CH 40V 16.1A/50A TO263 |
|
AUIRFB8407Rochester Electronics |
MOSFET N-CH 40V 195A TO220AB |
|
HUF76633S3STRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
IPU60R3K4CEAKMA1Rochester Electronics |
MOSFET N-CH 600V 2.6A TO251-3 |
|
IRF9510PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 4A TO220AB |
|
FQU12N20TURochester Electronics |
MOSFET N-CH 200V 9A I-PAK |
|
IXTH02N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO247 |
|
STL51N3LLH5STMicroelectronics |
MOSFET N-CH 30V 51A POWERFLAT |
|
IXTA42N15T-TRLWickmann / Littelfuse |
MOSFET N-CH 150V 42A TO263 |
|
FDMS8690Rochester Electronics |
MOSFET N-CH 30V 14A/27A 8MLP |