English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 39A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 35mOhm @ 39A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 67 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1.82 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 145W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPU60R3K4CEAKMA1Rochester Electronics |
MOSFET N-CH 600V 2.6A TO251-3 |
|
IRF9510PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 4A TO220AB |
|
FQU12N20TURochester Electronics |
MOSFET N-CH 200V 9A I-PAK |
|
IXTH02N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO247 |
|
STL51N3LLH5STMicroelectronics |
MOSFET N-CH 30V 51A POWERFLAT |
|
IXTA42N15T-TRLWickmann / Littelfuse |
MOSFET N-CH 150V 42A TO263 |
|
FDMS8690Rochester Electronics |
MOSFET N-CH 30V 14A/27A 8MLP |
|
STP190N55LF3STMicroelectronics |
MOSFET N-CH 55V 120A TO220-3 |
|
SI4874BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A 8SO |
|
SI2303CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 2.7A SOT23-3 |
|
STB14NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
|
NTTFS6H850NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/68A 8WDFN |
|
STP8N90K5STMicroelectronics |
MOSFET N-CH 900V 8A TO220 |
