English
简体中文
RES SMD 21.5KOHM 0.1% 0.15W 0805
CAP CER 1206 2.2NF 200V C0G 2%
MOSFET N-CH 30V 100A LFPAK56
MODULE DDR SDRAM 1GB 200SODIMM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.3mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.15V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6227 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 121W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL1404SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
2N7002ADiotec Semiconductor |
MOSFET N-CH 60V 280MA SOT23-3 |
|
IRLHM620TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 26A/40A PQFN |
|
DMG3402LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
FDP3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 105V 5.9A/41A TO220 |
|
SI8401DB-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 4MICROFOOT |
|
FDS6680Rochester Electronics |
MOSFET N-CH 30V 11.5A 8SOIC |
|
FDMC86183Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 47A 8PQFN |
|
IPN80R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4.5A SOT223 |
|
BSO110N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 10A 8DSO |
|
APT9F100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 9A TO247 |
|
DMTH4004LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A PWRDI5060-8 |
|
SQS423ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 16A PPAK 1212-8W |