English
简体中文
MOSFET N-CH 30V 21A 8SO
CAP FILM 0.022UF 10% 630VDC RAD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3.23 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCH1330-TL-HRochester Electronics |
MOSFET P-CH 20V 1.5A 6SCH |
|
CEDM8001 TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 100MA SOT883 |
|
PSMN4R5-40PS,127Nexperia |
MOSFET N-CH 40V 100A TO220AB |
|
SIRA14DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 58A PPAK SO-8 |
|
SMP3003-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 75V 100A D2PAK |
|
FDD8447LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 15.2A/50A DPAK |
|
DMN1054UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 8V 2.7A X1-WLB0808-4 |
|
BSF134N10NJ3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 9A/40A 2WDSON |
|
APT5010JLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 41A ISOTOP |
|
SIRA52DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
PHK5NQ15T518Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPP60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO220-3 |
|
DMN53D0L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 500MA SOT23 |