English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT3006LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 14.1A 6UDFN |
|
SI3483CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
BSR202NL6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 3.8A SC59 |
|
STB11NK40ZT4STMicroelectronics |
MOSFET N-CH 400V 9A D2PAK |
|
RQ6E045SNTRROHM Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
|
FDMS8570SDCRochester Electronics |
28A, 25V, 0.0028OHM, N-CHANNEL, |
|
NTD14N03RGRochester Electronics |
MOSFET N-CH 25V 2.5A DPAK |
|
2SK4124Rochester Electronics |
N-CHANNEL SILICON MOSFET |
|
IRFI9620GPBFVishay / Siliconix |
MOSFET P-CH 200V 3A TO220-3 |
|
PSMN085-150K,518Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
FJ3P02100LPanasonic |
MOSFET P-CH 20V 4.4A 3PMCP |
|
NVMFS6H800NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 28A/203A 5DFN |
|
IPI147N12N3GRochester Electronics |
IPI147N12 - 12V-300V N-CHANNEL P |
