







CIR BRKR THRM 1A 250VAC 50VDC
CRYSTAL 13.5600MHZ 10PF SMD
MOSFET P-CH 30V 22A DIRECTFET
GW JTLPS1.EM-JNKL-A636-1-150-R33
LED DURIS E 2835 SMD
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 160A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.9mOhm @ 22A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7305 pF @ 15 V |
| 场效应管特征: | - |
| 功耗(最大值): | 2.1W (Ta), 113W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ MX |
| 包/箱: | DirectFET™ Isometric MX |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
STW70N60DM2STMicroelectronics |
MOSFET N-CH 600V 66A TO247 |
|
|
IXFN170N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 170A SOT227B |
|
|
IRF9510PBFVishay / Siliconix |
MOSFET P-CH 100V 4A TO220AB |
|
|
STP9NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 7.2A TO220FP |
|
|
IXTA60N10T-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 60A TO263 |
|
|
SCH2830-TL-ERochester Electronics |
MOSFET P-CH 20V 1A 6SCH |
|
|
IPA60R125C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO220-FP |
|
|
SI4435DYSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8SOIC |
|
|
IXTH32N65XWickmann / Littelfuse |
MOSFET N-CH 650V 32A TO247 |
|
|
IAUS300N08S5N012ATMA1Rochester Electronics |
IAUS300N08 - 75V-120V N-CHANNEL |
|
|
IPU60R1K4C6BKMA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO251-3 |
|
|
PMZB150UNEYLNexperia |
MOSFET N-CH 20V 1.5A DFN1006B-3 |
|
|
NTD5407NT4GRochester Electronics |
MOSFET N-CH 40V 7.6A/38A DPAK |