English
简体中文
MOSFET N-CH 60V 24A PWRDI5060-8
IC FIFO 8KX18 LP 20NS 64QFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 5.1A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 584 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6509ENJTLROHM Semiconductor |
MOSFET N-CH 650V 9A LPTS |
|
BSS192PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 190MA SOT89 |
|
IRFI9540GPBFVishay / Siliconix |
MOSFET P-CH 100V 11A TO220-3 |
|
CMS40N03V8-HFComchip Technology |
MOSFET N-CH 30V 25A/40A 8PDFN |
|
PMPB47XP,115Nexperia |
MOSFET P-CH 30V 4A DFN2020MD-6 |
|
DMP4010SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 15A/50A TO252 |
|
FQP6N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 5.5A TO220-3 |
|
SIHG21N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 21A TO247AC |
|
DMN63D8L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 350MA SOT23 |
|
TSM70N380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 11A TO251 |
|
NDB5060LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A D2PAK |
|
IRLML0040TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 3.6A SOT23 |
|
MTB55N06ZRochester Electronics |
N-CHANNEL POWER MOSFET |