







FUSE BOARD MNT 500MA 250VAC RAD
MOSFET N-CH 300V 7A D2PAK
IC OFFLINE SWIT OTP OCP HV 8SMD
COMP O= .240,L= .81,W= .032
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 700mOhm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 610 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.13W (Ta), 85W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI5441BDC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.4A 1206-8 |
|
|
CDM22012-800LRFP SLCentral Semiconductor |
MOSFET N-CH 800V 12A TO220FP |
|
|
FCH165N65S3R0-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO247-3 |
|
|
BSZ086P03NS3EGATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 13.5A/40A TSDSON |
|
|
IRFU7440PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 90A IPAK |
|
|
BSS138PW,115Nexperia |
MOSFET N-CH 60V 320MA SOT323 |
|
|
IPL60R185P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 19A 4VSON |
|
|
IXFN55N50FWickmann / Littelfuse |
MOSFET N-CH 500V 55A SOT227B |
|
|
DMP3028LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 21A PWRDI5060-8 |
|
|
IRL3713PBFRochester Electronics |
IRL3713 - 12V-300V N-CHANNEL POW |
|
|
IRF1607PBFRochester Electronics |
MOSFET N-CH 75V 142A TO220AB |
|
|
IPD60R180P7SE8228AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A TO252-3 |
|
|
FDD2572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4A/29A TO252AA |