PHT 0402 3901 B G TR1000
RES 340 OHM 1/8W .1% AXIAL
MOSFET P-CH 30V 21A PWRDI5060-8
IC MCU 16BIT 16KB FLASH 28SPDIP
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 28mOhm @ 7A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 22 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.372 nF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.28W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI5060-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRL3713PBFRochester Electronics |
IRL3713 - 12V-300V N-CHANNEL POW |
|
IRF1607PBFRochester Electronics |
MOSFET N-CH 75V 142A TO220AB |
|
IPD60R180P7SE8228AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A TO252-3 |
|
FDD2572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4A/29A TO252AA |
|
STP12N65M5STMicroelectronics |
MOSFET N-CH 650V 8.5A TO220AB |
|
SI7434DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 250V 2.3A PPAK SO-8 |
|
APT20M11JVRRoving Networks / Microchip Technology |
MOSFET N-CH 200V 175A ISOTOP |
|
TSM7N90CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 900V 7A TO220 |
|
IPB60R250CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM80N30LDRectron USA |
MOSFET N-CHANNEL 30V 80A TO252-2 |
|
YJQ35N04A-F1-1100HF |
N-CH MOSFET 40V 35A DFN3333-8L |
|
TP2640LG-GRoving Networks / Microchip Technology |
MOSFET P-CH 400V 86MA 8SOIC |
|
IPW65R145CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17A TO247-3 |